Abstract
The energy band gaps (E gL, E gΓ and E gX) and electronic band structure in the pentanary Al xIn1-xP ySb zAs1-y-z semiconducting alloy are determined. Additionally, the Fröhlich coupling parameter, the phonon frequencies (ω LO, ω TO), transverse effective charge (e T*), high-frequency dielectric constant (ε ∞), static dielectric constant (ε 0) and refractive index (n) are calculated. A combination of the virtual crystal approximation and the empirical pseudopotential approach is used in our study. The calculations are done at room temperature and normal pressure. The studied properties for the new alloy under investigation lattice-matched to the InP substrate give a good agreement with the experiment. It is discovered that materials with lower coupling constants are advantageous for a parametric interaction to be cost-effective. It is expected that this paper's findings will apply to a wide range of industrial applications.
Original language | English |
---|---|
Article number | 194 |
Journal | Pramana - Journal of Physics |
Volume | 97 |
Issue number | 4 |
DOIs | |
State | Published - Dec 2023 |
Keywords
- 45.10.Ab
- 62.20.Dc
- 62.20.de
- 81.40.Jj
- Electronic
- mechanical
- optical
- phonon
- substrates