Structural and Optoelectronic Properties of Mixed Mg–Cu–Cd Spinel Chromites Prepared by the sol–gel Method Under Different Calcination Temperatures

Mohamed Lamjed Ben Youssef Bouazizi, Sobhi Hcini, Kamel Khirouni, Fehmi Najar, Abdullah H. Alshehri

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

This study investigated the thermal, structural, and optoelectronic properties of Mg0.4Cu0.4Cd0.2Cr2O4 spinel chromites prepared by the sol-gel method at different calcination temperatures (850 and 950 °C). According to Rietveld’s refinement of the X-ray patterns, the samples crystallized in the cubic spinel structure (Fd3 ¯ m space group). As the calcination temperature increases, crystallite size and unit cell parameters increase. The FTIR bands of the tetrahedral (A) and octahedral [B] sites shift toward higher wavenumbers with the rise of calcination temperature. From the absorbance and Tauc method, the samples exhibit direct optical transitions. The band-gap energy (Eg) decreases due to the increase in crystallite size. Urbach energies also decrease, implying a decrease in defects and disorders with increasing calcination temperature. In addition, penetration depth, refractive index, extinction coefficient, dielectric constants, conductivity, and loss factor were studied versus wavelength. From these variations in optical parameters, some interesting optoelectronic applications were derived for the as-synthetized Mg0.4Cu0.4Cd0.2Cr2O4 samples.

Original languageEnglish
Pages (from-to)2127-2141
Number of pages15
JournalJournal of Inorganic and Organometallic Polymers and Materials
Volume33
Issue number7
DOIs
StatePublished - Jul 2023

Keywords

  • Optical properties
  • Optoelectronic applications
  • Spinel chromites
  • Structural properties

Fingerprint

Dive into the research topics of 'Structural and Optoelectronic Properties of Mixed Mg–Cu–Cd Spinel Chromites Prepared by the sol–gel Method Under Different Calcination Temperatures'. Together they form a unique fingerprint.

Cite this