Abstract
Binary solid solution of gallium (Ga3+)-modified 0.65Bi1.05FeO3–0.35BaTiO3 (BFGO–BTO with 0–2 mol% Ga3+ content) ceramics were synthesized by a solid-state reaction method, followed by water quenching process. The effects of Ga3+ modifications on the crystal structure, microstructure, dielectric, ferroelectric, and piezoelectric properties of the BFO–BTO ceramics were studied. X-ray diffraction patterns confirmed a single perovskite phase without any secondary phases. Improvements of ferroelectric and piezoelectric properties were obtained at the optimum composition of BFGO–BTO system. Meanwhile, BFGO–BTO ceramics had a high static piezoelectric coefficient (d33) of 128 pC/N at 1.5 mol% Ga3+-content with relatively high operating temperature compared to other lead-free bismuth (Bi)-based systems.
| Original language | English |
|---|---|
| Pages (from-to) | 54-60 |
| Number of pages | 7 |
| Journal | Ferroelectrics |
| Volume | 541 |
| Issue number | 1 |
| DOIs | |
| State | Published - 12 Mar 2019 |
| Externally published | Yes |
Keywords
- BFGO–BTO
- dielectric
- ferroelectric properties
- Lead-free piezoelectric