Combining the nonperovskite CsPbI₃ with graphene layer for high-speed flexible polymer nanocomposite resistive memory application

The surge in data processing and internet of things has uplifted the demand for stable memory devices with high speed along with the feasibility in flexible electronics. Here in, a resistive switching material has been developed by a composite system, graphene and non-perovskite phase of CsPbI3 (S-CsPbI3) in the insulating polymer matrix. The polymer nanocomposite has been employed in memristor-type two terminal device with varying concentration. The optimized device showed exceptional resistive memory properties such as low operating voltage (>= 1 V), decent on/off ratio (103), high switching speed (100 ns), long endurance (2000 cycles), and data retention (105 s). Decent resistive memory parameters were also observed in the bending condition (i.e. 1000 cycling endurance and 104 s of data retention). Excellent resistive memory features could be associated to the charge trapping and detrapping phenomenon within the functional matrix. Meanwhile, enhanced resistive memory behavior and high-speed switching could be attributed to the charge transfer ability of graphene cross-linked to the S-CsPbI3, which is also confirmed by the conducting Atomic Force Microscopy studies.