TY - JOUR
T1 - Theoretical exploration of eco-friendly NbCu3M4 (M = S, Se, Te) compounds for optoelectronic and thermoelectric applications
AU - Tauqeer, Muhammad
AU - Saeedi, Ahmad M.
AU - Althomali, Raed H.
AU - Solre, Gideon F.B.
AU - El-Zahhar, Adel A.
AU - Alghamdi, Majed M.
AU - Asif, Sana Ullah
N1 - Publisher Copyright:
© 2025 Elsevier Ltd
PY - 2026/1
Y1 - 2026/1
N2 - The rapid depletion of natural resources highlights the urgent need for sustainable, eco-friendly energy materials. In the present work, we employ first-principles density functional theory (DFT) computations to systematically investigate the structural, electronic, mechanical, optical, thermodynamic as well as thermoelectric properties of NbCu3M4(M=S,Se,Te) compounds. Our computational findings reveal that these materials are thermodynamically and dynamically stable in a cubic structure. They are confirmed to be indirect band gap semiconductors, with PBE-GGA calculated band gaps ranging from 0.96 eV NbCu3Te4 to 1.65 eV (NbCu3S4). Mechanical analysis confirms their elastic stability, brittle nature (with a Pugh's ratio B/G<1.45), and covalent bonding (indicated by negative Cauchy pressures). Optical exploration demonstrates high absorption coefficients (on the order of 105cm−1) in the visible-UV range, suggesting potential for optoelectronic devices. Thermodynamic calculations confirm stability for high-temperature operation (up to 800 K). Thermoelectric analyses reveal promising properties, including a high peak Seebeck coefficient (1.58mV/K) and power factors that steadily increase with temperature. Taken together, these comprehensive findings identify NbCu3M4 compounds as promising candidates for next-generation optoelectronic and thermoelectric applications.
AB - The rapid depletion of natural resources highlights the urgent need for sustainable, eco-friendly energy materials. In the present work, we employ first-principles density functional theory (DFT) computations to systematically investigate the structural, electronic, mechanical, optical, thermodynamic as well as thermoelectric properties of NbCu3M4(M=S,Se,Te) compounds. Our computational findings reveal that these materials are thermodynamically and dynamically stable in a cubic structure. They are confirmed to be indirect band gap semiconductors, with PBE-GGA calculated band gaps ranging from 0.96 eV NbCu3Te4 to 1.65 eV (NbCu3S4). Mechanical analysis confirms their elastic stability, brittle nature (with a Pugh's ratio B/G<1.45), and covalent bonding (indicated by negative Cauchy pressures). Optical exploration demonstrates high absorption coefficients (on the order of 105cm−1) in the visible-UV range, suggesting potential for optoelectronic devices. Thermodynamic calculations confirm stability for high-temperature operation (up to 800 K). Thermoelectric analyses reveal promising properties, including a high peak Seebeck coefficient (1.58mV/K) and power factors that steadily increase with temperature. Taken together, these comprehensive findings identify NbCu3M4 compounds as promising candidates for next-generation optoelectronic and thermoelectric applications.
KW - Boltzmann transport
KW - DFT computation
KW - Energy materials
KW - First principle calculations
KW - Optoelectronics device
KW - Thermoelectric devices
UR - https://www.scopus.com/pages/publications/105021616243
U2 - 10.1016/j.micrna.2025.208445
DO - 10.1016/j.micrna.2025.208445
M3 - Review article
AN - SCOPUS:105021616243
SN - 2773-0131
VL - 209
JO - Micro and Nanostructures
JF - Micro and Nanostructures
M1 - 208445
ER -