Terahertz evanescent wave tunneling in bianisotropic thin films

Faroq Razzaz, Majeed A.S. Alkanhal

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

This paper presents a theoretical investigation of electromagnetic wave tunneling through bianisotropic-bianisotropic interfaces. The dispersion relation and the conditions for terahertz evanescent wave tunneling in bianisotropic thin films are derived. The developed Berreman's matrix model is used to acquire the evanescent field characteristics through the bianisotropic layers. Fields incident with frequencies belong to the structure spectral interval will be tunneled effectively to the other side of the bianisotropic thin film via evanescent waves.

Original languageEnglish
Title of host publication2018 International Applied Computational Electromagnetics Society Symposium in Denver, ACES-Denver 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9780996007870
DOIs
StatePublished - 23 May 2018
Externally publishedYes
Event2018 International Applied Computational Electromagnetics Society Symposium in Denver, ACES-Denver 2018 - Denver, United States
Duration: 25 Mar 201829 Mar 2018

Publication series

Name2018 International Applied Computational Electromagnetics Society Symposium in Denver, ACES-Denver 2018

Conference

Conference2018 International Applied Computational Electromagnetics Society Symposium in Denver, ACES-Denver 2018
Country/TerritoryUnited States
CityDenver
Period25/03/1829/03/18

Keywords

  • Bianisotropic
  • Terahertz
  • Thin film
  • Tunneling

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