Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

S. Michel; E. Lavallée; J. Beauvais; J. Mouine

doi:10.1049/el:19990817

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

S. Michel
, E. Lavallée
, J. Beauvais
, J. Mouine

Université de Sherbrooke

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Recently, a novel silicide direct write electron beam lithography (SiDWEL) process has been developed in order to achieve high resolution (50 nm) silicide structures without the need for any supplementary annealing step. This new lithography technique is used to fabricate N-type MOSFET devices with platinum silicide gates. The fabrication uses a mix and match approach to combine the SiDWEL process with conventional MOSFET fabrication techniques.

Original language	English
Pages (from-to)	1283-1284
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	15
DOIs	https://doi.org/10.1049/el:19990817
State	Published - 22 Jul 1999
Externally published	Yes

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1049/el:19990817

Cite this

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title = "Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process",

abstract = "Recently, a novel silicide direct write electron beam lithography (SiDWEL) process has been developed in order to achieve high resolution (50 nm) silicide structures without the need for any supplementary annealing step. This new lithography technique is used to fabricate N-type MOSFET devices with platinum silicide gates. The fabrication uses a mix and match approach to combine the SiDWEL process with conventional MOSFET fabrication techniques.",

author = "S. Michel and E. Lavall{\'e}e and J. Beauvais and J. Mouine",

year = "1999",

month = jul,

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doi = "10.1049/el:19990817",

language = "English",

volume = "35",

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journal = "Electronics Letters",

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T1 - Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

AU - Michel, S.

AU - Lavallée, E.

AU - Beauvais, J.

AU - Mouine, J.

PY - 1999/7/22

Y1 - 1999/7/22

N2 - Recently, a novel silicide direct write electron beam lithography (SiDWEL) process has been developed in order to achieve high resolution (50 nm) silicide structures without the need for any supplementary annealing step. This new lithography technique is used to fabricate N-type MOSFET devices with platinum silicide gates. The fabrication uses a mix and match approach to combine the SiDWEL process with conventional MOSFET fabrication techniques.

AB - Recently, a novel silicide direct write electron beam lithography (SiDWEL) process has been developed in order to achieve high resolution (50 nm) silicide structures without the need for any supplementary annealing step. This new lithography technique is used to fabricate N-type MOSFET devices with platinum silicide gates. The fabrication uses a mix and match approach to combine the SiDWEL process with conventional MOSFET fabrication techniques.

UR - https://www.scopus.com/pages/publications/0032690266

U2 - 10.1049/el:19990817

DO - 10.1049/el:19990817

M3 - Article

AN - SCOPUS:0032690266

SN - 0013-5194

VL - 35

SP - 1283

EP - 1284

JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

Abstract

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