Abstract
Measurements with a rf compensated Langmuir probe and optical emission spectroscopy are carried out in capacitively coupled rf (13.56 MHz) pure nitrogen N 2 discharges at fixed rf voltage over a wide range of pressure, 30 to 400 mTorr. The electron energy probability function (EEPF) measured below 100 mTorr resembles a bi-Maxwellian-type distribution. At pressure range of 100-200 mTorr, the EEPF has non-Maxwellian distribution with a dip near 4.5 eV. At the highest pressure of 400 mTorr, the EEPF evolves into a Druyvestein-like distribution and the dip disappears. The electron density significantly decreases with increase in the N 2 pressure. On the other hand, the electron temperatures gradually decrease with an increase in N 2 pressure, reaching minimum at 150 mTorr, beyond which it abruptly increases. Such evolution of the EEPFs shape with gas pressure has been discussed in terms of non-local electron kinetics and heating mode transition. The emission intensities of nitrogen (0-0) band of second positive system at 337.1 nm and (0-0) band of first negative systems at 391.4 nm are used to determine the dependence of their radiative states N 2 (C 3 u) and N 2 + (B 2 u +) with nitrogen pressure. It is observed that the pressure influences the radiative states differently owing to their different populating mechanisms. The vibrational temperature T ib and rotational temperature T rot are measured for the sequence ( = - 2) of N 2 second positive system (C 3 → B 3 g) using the method of comparing the measured and calculated spectra with a chi-squared minimization procedure. It was found that both T ib and T rot have similar dependences with N 2 pressure; peaked at 100 mTorr beyond which it monotonically decreases with increase in the N 2 pressure. The correlation between the observed maximum value of T ib around 100 mTorr and the detected dip in the EEPF in the same pressure range has been discussed.
| Original language | English |
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| Article number | 113303 |
| Journal | Journal of Applied Physics |
| Volume | 110 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1 Dec 2011 |