Abstract
Gd-doped Aurivillius KBi(4)Ti(4)O(15)ceramics were prepared via conventional solid-state method for the first time. Dielectric behaviors and electrical properties were probed via dielectric and impedance spectroscopies. A single relaxation behavior due to bulk contribution was observed in the Gd(0.5)K(0.5)Bi(4)Ti(4)O(15)ceramics. Phase transition was noted at similar to 560 degrees C. Kinetic analysis was carried out to probe conductivity and dielectric relaxation in the GKBT ceramics. The study elucidated the contributions of defect-conduction-relaxation behaviors. These types of Aurivillius compounds have fascinating industrial applications in piezoelectric devices at high temperatures and frequencies and in dielectric capacitors. It is essential to understand the electrical behaviors for modification process in future to enhance the performance properties of electronic ceramics.
| Original language | English |
|---|---|
| Pages (from-to) | 14674-14680 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 31 |
| Issue number | 17 |
| Early online date | Jul 2020 |
| DOIs | |
| State | Published - Sep 2020 |
| Externally published | Yes |
Keywords
- Bismuth titanate
- Ferroelectric properties
- Piezoelectric properties
- Relaxation
- Conduction
- Impedance