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Boron Nitride Nanowires Synthesis via a Simple Chemical Vapor Deposition at 1200°C

  • Pervaiz Ahmad
  • , Mayeen Uddin Khandaker
  • , Yusoff Mohd Amin
  • , Ziaul Raza Khan

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

A very simple chemical vapor deposition technique is used to synthesize high quality boron nitride nanowires at 1200 degrees C within a short growth duration of 30 min. FESEM micrograph shows that the as-synthesized boron nitride nanowires have a clear wire like morphology with diameter in the range of similar to 20 to 150 nm. HR-TEM confirmed the wire-like structure of boron nitride nanowires, whereas XPS and Raman spectroscopy are used to find out the elemental composition and phase of the synthesized material. The synthesized boron nitride nanowires have potential applications as a sensing element in solid state neutron detector, neutron capture therapy and microelectronic devices with uniform electronic properties.
Original languageEnglish
Title of host publicationNational Physics Conference 2014 (perfik 2014)
EditorsFA Rahman, Y ThianKhok, P YeongNan, L HorngSheng
PublisherAmer Inst Physics
Number of pages5
Volume1657
ISBN (Electronic)978-0-7354-1299-6
DOIs
StatePublished - 2015
Externally publishedYes
EventNational Physics Conference (PERFIK) - Kuala Lumpur, Malaysia
Duration: 18 Nov 201419 Nov 2014

Publication series

NameAip Conference Proceedings

Conference

ConferenceNational Physics Conference (PERFIK)
Country/TerritoryMalaysia
CityKuala Lumpur
Period18/11/1419/11/14

Keywords

  • BNNTs
  • BNNWs
  • Growth duration
  • h-BN

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