Abstract
La0 . 33Sr0 . 67Mn0 . 33Ti0 . 67O3± δ perovskite was prepared by the standard solid state reaction at 1773 K. The sample crystallizes in the cubic Pm − 3m structure. The electrical properties of the sample have been investigated above room temperature in 293–373 K range with varying frequency between 102 and 106 Hz using complex impedance analysis. The sample exhibit a metal–semiconductor transition temperature at TMS = 303 K. The conductance curves were well fitted by Jonscher power law G(ω) = Gdc + Aωn, which shows that with increasing temperature, the exponent (n) decreases below TMS, and increases above TMS. The activation energy deduced from the analysis of the conductance curves matches very well with the value estimated from the relaxation time indicating that relaxation process and electrical conductivity are attributed to the same defect. Nyquist plots of impedance show semicircle arcs for sample and an electrical equivalent circuit has been proposed to explain the impedance results.
| Original language | English |
|---|---|
| Pages (from-to) | 644-652 |
| Number of pages | 9 |
| Journal | Phase Transitions |
| Volume | 90 |
| Issue number | 6 |
| DOIs | |
| State | Published - 3 Jun 2017 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- complex impedance spectroscopy
- conductance
- LSMTO
- metal–semiconductor transition
- relaxation time
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